| 摘要 |
PURPOSE: To increase the electrostatic storage capacity of a limited area by alternately laminating nodes and plates made of low resistance layers via a dielectric layer, removing part of the film, and connecting the nodes to each other and the plates to each other. CONSTITUTION: After a photoresist RP has been deposited, a photoresist PR is patterned by using a mask in which a pattern of the mask of a second node 7 is extended by about 1μm. Then, the photoresist PR is heated, reflowed along a sidewall of a dielectric 7a, and the dielectric 6a is removed by etching by, for example, an RIE method. Then, the photoresist PR is removed, a polycrystalline silicon layer which is to become a second plate is formed by using polycrystalline silicon (since part of the film 6a is removed at this time, a first plate 6 is connected to a second plate 8), then photoetched to form the second plate 8. Eventually, an oxide layer 9 and a BPS layer 1 are sequentially formed in accordance with general processes.
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