MANUFACTURE OF QUANTUM FINE WIRE STRUCTURE

摘要

PURPOSE:To provide a method of manufacturing the quantum fine wire structure of a compound semiconductor device which is of low damage, high density and excellent controllability. CONSTITUTION:A buffer layer 102, a barrier layer 103, a quantum well layer 104 and a barrier layer 105 are successively formed by crystal growth. Then an oxide film 106 is built up and a resist pattern 107 is formed by lithography. The oxide film 106 is etched and the resist pattern 107 is transferred to form a mask. The barrier layer 105 and the quantum well layer 104 are etched by ion beam etching. The barrier layer 103 is etched by wet etching in a depth direction and, as the wet etching is also developed laterally, the wire widths of the barrier layer 105 and the quantum well layer 104 are narrowed. An Al0.3 Ga0.7 As buried layer 109 is built up by crystal growth over the whole surface by a molecular beam epitaxy method.