发明名称 |
Metall-Halbleiter-Diode und Verfahren zur Herstellung von Metall-Halbleiter-Dioden |
摘要 |
For a metal semiconductor diode the invention proposes to grow the depletion layer of constrained InxGa1-xAs epitaxially, with increasing indium content x in the direction of the metal contact, and/or to delimit a diode region by surrounding insulation areas in a planar structure consisting of a sequence of layers, with the metal contact situated on the surface of the layer sequence. Advantageous production methods are indicated therefor.
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申请公布号 |
DE4412475(A1) |
申请公布日期 |
1995.10.19 |
申请号 |
DE19944412475 |
申请日期 |
1994.04.14 |
申请人 |
DAIMLER-BENZ AKTIENGESELLSCHAFT, 70567 STUTTGART, DE |
发明人 |
BRUGGER, HANS, DR.RER.NAT., 89250 SENDEN, DE |
分类号 |
G01S7/02;G01S7/03;H01L21/329;H01L29/872;(IPC1-7):H01L29/86 |
主分类号 |
G01S7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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