| 摘要 |
PURPOSE:To manufacture an optical integrated circuit efficiently at high yield rate and at low cost by simple mask alignment. CONSTITUTION:The first photoresist 306 is coated on an optical waveguide, and the region, on which a microguide 201, a waveguide lens 202, an optical branching filter 203, a phase shifter 204 and two mirrors 205 and 206 are formed, is exposed and removed. The clad layer 103, located on SiO2, is removed by etching using the first resist film 206 which is left after patterning. This substrate is newly coated with the second photoresist 307, the region 207, consisting of the microguide 201, waveguide lens 202, optical branching filter 203 and phase shifter 204, is left and other region is exposed and removed. An Si3N4 core layer 102 and the clad layer 101 under SiO2 are removed by etching using the second resist film 307 and the first resist film 306, which are left after patterning, as a mask. |
