DRAM CELL MANUFACTURING PROCESS

摘要

The method for manufacturing a capacitor for DRAM cell comprises the steps of: patterning an oxide layer over a substrate, forming an n+ region and then patterning a first polysilicon which is to be used as a node; forming side walls over the surface of the first polysilicon at a constant interval by using a photo-etching method; removing a predetermined depth of the upper portion of the first polysilicon except the side wall region, removing the side walls, forming an insulating material over the surface of the first polysilicon and depositing a polysilicon which is to be used as a plate over the whole surface.