Plasma etch apparatus with heated scavenging surfaces
摘要
The invention is embodied in a method of operating a plasma etch reactor, consisting of introducing a gas into the reactor which disassociates as a plasma into an etch species which etches oxide films on a work piece in the reactor and a non-etching species combinable with the etch species into an etch-preventing polymer condensable onto the work piece below a characteristic deposition temperature, providing an interior wall comprising a material which scavenges the etching species, and maintaining a temperature of the interior wall above the deposition temperature.
申请公布号
US5477975(A)
申请公布日期
1995.12.26
申请号
US19930138060
申请日期
1993.10.15
申请人
RICE, MICHAEL;MARKS, JEFFREY;GROECHEL, DAVID W.;BRIGHT, NICOLAS J.
发明人
RICE, MICHAEL;MARKS, JEFFREY;GROECHEL, DAVID W.;BRIGHT, NICOLAS J.