发明名称 |
Method of forming local interconnect structure without P-N junction between active elements |
摘要 |
An interconnect structure, and method for forming same, is suitable for use in integrated circuits such as SRAM devices. The structure uses masking of a polycrystalline silicon interconnect level to move a P-N junction to a region within a polycrystalline silicon interconnect line, rather than at the substrate. This P-N junction can then be shorted out using a refractory metal silicide formed on the polycrystalline silicon interconnect structure.
|
申请公布号 |
US5478771(A) |
申请公布日期 |
1995.12.26 |
申请号 |
US19940359006 |
申请日期 |
1994.12.19 |
申请人 |
SGS-THOMSON MICROELECTRONICS, INC. |
发明人 |
CHAN, TSIU C.;BRYANT, FRANK R.;WALTERS, JOHN L. |
分类号 |
H01L21/768;H01L23/532;H01L27/11;(IPC1-7):H01L21/70 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|