发明名称 |
Semiconductor circuit device capable of reducing influence of a parasitic capacitor |
摘要 |
A semiconductor circuit device includes a differential amplifier circuit having a first parasitic capacitor formed between the semiconductor substrate and a first resistor and a second parasitic capacitor formed between the semiconductor substrate and a second resistor. Each of the first and the second resistors is implemented by a wiring pattern over the substrate so that the first and the second parasitic capacitors are equivalent to each other.
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申请公布号 |
US5479044(A) |
申请公布日期 |
1995.12.26 |
申请号 |
US19940263737 |
申请日期 |
1994.06.22 |
申请人 |
NEC CORPORATION |
发明人 |
NARAHARA, TETSUYA;MATSUBARA, YASUSHI |
分类号 |
H01L23/64;H01L27/06;H01L27/07;H03F3/45;(IPC1-7):H01L27/02 |
主分类号 |
H01L23/64 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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