发明名称 STORAGE DEVICE
摘要 <p>PURPOSE:To prevent start of discharge of a bit line before a potential of a word line is confirmed. CONSTITUTION:Word lines X1-Xi are connected to gates of dummy transistors 210-1 to 210-i respectively. The dummy transistors 210-1 to 210-i are connected in series between a P channel MOS transistor 223 connected between a power supply potential and a ground potential and a ground potential. A potential between the dummy transistors 210-1 to 210-i and the p channel MOS transistor 223 is supplied to a gate of a transistor 224 for discharge, when a potential supplied to a gate is a high level, the transistor 224 for discharge make bit lines 230 and 231 discharge to a ground potential.</p>
申请公布号 JPH0831192(A) 申请公布日期 1996.02.02
申请号 JP19940166861 申请日期 1994.07.19
申请人 NEC CORP 发明人 AKATSUKA MICHIHIRO
分类号 G11C17/18;(IPC1-7):G11C17/18 主分类号 G11C17/18
代理机构 代理人
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