| 发明名称 |
FORMING METHOD OF MICROPATTERN, GATE ELECTRODE, AND QUANTUM FINE WIRE |
| 摘要 |
PURPOSE:To provide a method of accurately forming a micro-gate electrode in a short time. CONSTITUTION:A step is formed on a GaAs substrate 1 by SiN film 2 and an SiO2 film 4 is formed covering both the SiN film 2 and the GaAs substrate 1. The SiO2 film 4 deposited on the side wall of the SiN film 2 is selectively removed with very thin buffer hydrofluoric acid solutiomx, whereby a gate opening 6 is provided to the SiO2 film 4 on the GaAs substrate 1 along the side wall of the film 4. A gate metal is formed in the gate opening 6. |
| 申请公布号 |
JPH0845963(A) |
申请公布日期 |
1996.02.16 |
| 申请号 |
JP19940176328 |
申请日期 |
1994.07.28 |
| 申请人 |
SANYO ELECTRIC CO LTD |
发明人 |
MATSUSHITA SHIGEHARU;HARADA YASOO |
| 分类号 |
H01L21/28;H01L21/306;H01L21/338;H01L21/768;H01L23/522;H01L29/06;H01L29/812;(IPC1-7):H01L21/338 |
主分类号 |
H01L21/28 |
| 代理机构 |
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