| 摘要 |
PURPOSE:To make it possible to perpendicularly form the section shapes of resist patterns in a method for forming the resist patterns at a level below sub-quarter micron using a chemical amplification system resist. CONSTITUTION:For example, the chemical amplification system positive resist 12 is applied on a substrate 11 and is irradiated with a laser beam 13 of energy which does not attain the exposure threshold level, by which the entire surface is exposed. The chemical amplification system positive resist 14 is further applied thereon and is irradiated with an electron beam 11 to expose the desired resist patterns after the extinction reaction of the proton H<+> taking place near the boundary between the resist 12 and the substrate 11 is ended. As a result, the generation of skirting in the bottoms of resist apertures 17 after development is averted. |
