METHOD AND SYSTEM FOR ETCHING

摘要

PURPOSE: To protect the mask characteristics against deterioration due to active gas intruding from the end part of a mask. CONSTITUTION: A reaction chamber 1 is provided with a port 1a for introducing an active gas and a port 1b for discharging the gas produced through reaction by means of an exhaust pump. A supporting base 2 is disposed in the reaction chamber 1 and a rod 4 for supporting a substrate 3 to be processed is disposed on the supporting base 2. A rod 6 for securing a mask p.late piece 5 having desired shape with a polysilicon film being deposited on the surface thereof is disposed above the supporting rod 4. The gas introduction port 1a is coupled with one end of a transportation pipe 7 having the other end coupled with a quartz discharge tube 8 covered with a microwave applicator 9. The microwave applicator 9 has a port 9a for introducingμ-wave from aμ-wave source and the quartz discharge tube 8 is provided, at the other end thereof, with a gas supply port 8a. This structure protect the mask characteristics from deteriorating due to active gas intruding from the end part of a mask.