| 摘要 |
<p>PURPOSE: To form crystalline silicon TFTs capable of high-speed operation and amorphous silicon TFTs having a low OFF-current characteristic on the same substrate, by adding metal elements for helping the crystalization of silicon with a constant concentration, in the active region of a thin-film transistor constituting a peripheral drive circuit. CONSTITUTION: A silicon oxide base film 11 is formed on a substrate 10 by sputtering. In addition, an amorphous silicon film 12 is deposited. In addition consecutively, a silicon film 13 containing nickel is formed selectively by sputtering. On this occasion, the concentration of nickel is 1×10<16> -5×10<19> cm<-3> . At this time, monodomain regions represented by 121 and 122 are nearer to single crystal silicon and have few defects owing to the function of nickel. While one in a region 123 has relatively more defects. Consequently, it becomes possible to form crystalline silicon TFTs capable of high-speed operation and amorphous silicon TFTs of a low OFF-current characteristic on the same substrate.</p> |
