| 摘要 |
PURPOSE: To obtain a magnetic recording medium having considerably increased coercive force and fit for high recording density by regulating the resistivity of the substrate of a magnetic recording medium o a prescribed value or below. CONSTITUTION: The resistivity of a silicon substrate is regulated to <=2Ωcm, preferably <=0.2Ωcm, especially preferably <=0.02Ωcm so that the coercive force of a recording film is increased to 1,400-1,6000e by impressing bias voltage at the time of forming the film on the substrate by a bias sputtering method. It is necessary no reduce the resistivity of the silicon substrate to <=2Ωcm because only such low coercive force as about 1,3000e is ensured when the resistivity of the substrate exceeds 2Ωcm. The objective magnetic recording medium having considerably increased coercive force as compared with a magnetic recording medium using a conventional silicon substrate and fit, for high recording density is obtd. by using the resultant silicon substrate.
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