ELECTRON EMITTING ELEMENT, ITS MANUFACTURE, CRT AND PLANE DISPLAY

摘要

PURPOSE: To provide an electron emitting element at low drive voltage, to provide a method of manufacturing this electron emitting element, and further to provide a CRT or plane display at low drive voltage by utilizing this electron emitting element. CONSTITUTION: An emitter 12 of an electron emitting element, constituted of a gate electrode 15 and the emitter 12, is constituted of n-type Si formed with a porous Si layer. The emitter 12 is formed in conical, columner, pyramidal, truncated conical and plane shape. As a method of manufacture, after the electron emitting element with gate electrode is prepared on the n-type Si substrate 13, by anodizing an emitter surface while irradiated with light, the emitter surface is made porous, to manufacture the electron emitting element. By anodizing the n-type Si substrate, the surface is made porous, to form this surface as the emitter, so as to manufacture the electron emitting element. Further, the electron emitting element is used to serve as an electron source for a CRT or plane display.