SEMICONDUCTOR MEMORY DEVICE FABRICATION PROCESS

摘要

forming an interlayer insulation film over a substrate on which a transistor is formed; forming a photoresist pattern and defining a contact hole for connecting a source region and a drain region on the interlayer insulation film; depositing entirely an insulation material over resulting structure, and forming the contact hole exposing the source region by etching a portion of the deposited insulation film excepting a side wall of the photoresist pattern and removing the exposed interlayer insulation film; and removing the photoresist pattern, and forming a first conduction layer pattern for a storage electrode on the entire resulting surface. Capacitor of cylindrical structure with large capacitance can be manufactured with simple process.