SEMICONDUCTOR MEMORY DEVICE FABRICATION PROCESS

摘要

forming a field oxide film for separating an active region and an inactive region; forming a silicon nitride film on a semiconductor substrate including a transistor formed on the active region thereof; forming a silicon film(BPSG) including boron-P on the entire surface of the silicon nitride film; planarizing the surface of the silicon film; forming a contact window for connecting a source of the transistor and a first electrode of a capacitor; and forming the first electrode of the capacitor by depositing a conduction material over the resulting structure and patterning it. The memory cell of increased capacitance is manufactured with simplified process.