| 摘要 |
Ferrite films are formed by reactively sputtering elemental iron in an oxygen-containing plasma to deposit a layer of iron oxide (14) on a ceramic substrate (12). A dopant layer (16) of a transition metal-oxide is reactively sputtered onto the iron oxide layer from a target of a transition metal, such as nickel or zinc, using an oxygen-containing plasma. The substrate, the layer of iron oxide and the dopant layer are all heated under conditions sufficient to diffuse the dopant layer into the layer of iron oxide, thereby forming a doped ferrite thin film (20). The resulting doped ferrite film can be FeFe2O4, NiFe2O4, (NiZn)Fe2O4, or ZnFe2O4. |
