Semiconductor component with group III=V connection layer for e.g. double heterostructure laser

摘要

The semiconductor component includes a semiconductor substrate (1), a connection semiconductor layer (2), and electrodes (3a,3b). The substrate has a main upper surface on which is formed the connection layer which is of a group III-V substance containing two or more types of group III impurity elements. The connecting layer has a spontaneously formed upper grating and is formed as a strip with two ends. The electrodes are arranged at the two strip formed ends. The connection layer and the two electrodes form a resistive element. The semiconductor substrate contains indium phosphite and the connection semiconductor layer pref. comprises an aluminium indium arsenide of group II-V.