Verfahren zur Herstellung einer Halbleitervorrichtung

摘要

A method of fabricating a Silicon On Insulator (SOI) substrate for a bipolar transistor is described comprising the steps of forming a first insulating layer (23a) on a single crystal silicon substrate (21); patterning the first insulating layer to form an opening; growing a single crystal silicon layer (31) in the opening to form active and inactive regions; polishing the active region (31) with the first insulating layer as a polishing stopper to form a planarized surface; depositing a second insulating layer (23b) on the planarized surface; bonding a bonding substrate (27) to the second insulating layer; and polishing the silicon substrate using the first insulating layer (23a) as a stopper up to a surface of the active region. By this method, the stray capacitance occurring between the SOI substrate and any metal wiring portion formed thereon can be significantly reduced owing to the relatively thick insulating layer therebetween, and the parasitic capacitance can be substantially eliminated due to the insulating layer interposed between the bonding substrate and the active region that is to be used as a buried collector.