Heterojunction bipolar transistor for information processing

摘要

The transistor includes a monocrystalline, composite, semiconductor substrate with a main surface of an electrical polarity. On the surface are formed monocrystalline, epitaxial collector, emitter, and base layers. On loading of the base layer, a piezoelectric field is generated in the base layer which accelerates minority charge carriers flowing from the emitter layer to the collector layer. Pref. the base layer has a stepped composition between the emitter and collector layers. This composition generates an energy potential gradient accelerating the minority charge carries in the base layer during their flow from emitter to collector layers.