| 摘要 |
PROBLEM TO BE SOLVED: To obtain an SRAM cell suitable for high integration and stabilization of a cell by employing a cell having symmetrical structure. SOLUTION: The semiconductor device comprises a first contact C21 formed in the active area on a substrate, a substrate contact part formed in the first contact C21, a body part 40-3 formed while being spaced apart by a predetermined distance from the substrate contact part, and a first conductive line 40 comprising a pair of leg parts 40-1, 40-2 extending in parallel from the opposite edge parts of the body part 40-3 through the substrate contact part. The semiconductor device further comprises first and second electrodes 43-23, 43-24 formed, respectively, over the pair of leg parts 40-1, 40-2 of the first conductive line 40 and the active area 34 between the leg parts 40-1, 40-2 while being spaced apart by a predetermined distance from the substrate contact part, and a pair of first and second heavily doped regions formed in the active region on the opposite sides of the pair of leg parts 40-1, 40-2.
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