| 摘要 |
PURPOSE: To simplify the fabrication process of device while enhancing the reliability thereof. CONSTITUTION: An Al metallization 52 is deposited on a silicon substrate 51 and a PE-TEOS film 53 is deposited thereon by CVD. It is then spin coated with a photosensitive resin composition to form a photosensitive SOG film 54. The SOG film 54 is irradiated with light using a KrF excimer stepper and baked. Subsequently, it is developed and rinsed before a hole pattern 55 is formed by post-baking. A PE-TEOS film 58 is then deposited by CVD and the entire surface of the PE-TEOS film 56 is etched back by anisotropic etching to open a via hole 58 thus exposing the A1 metallization 52. Thereafter, TiN 59 is deposited as a barrier metal layer by CVD and an At electrode 60 of 0.6μm thick is formed by bias sputtering.
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