METHOD OF MANUFACTURING N-TYPE TRANSISTOR INJECTED WITH F+ ION,申请号KR1019920026724-传众专利搜索

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发明名称	METHOD OF MANUFACTURING N-TYPE TRANSISTOR INJECTED WITH F+ ION
摘要
申请公布号	KR1019960011638(B1)	申请公布日期	1996.08.24
申请号	KR1019920026724	申请日期	1992.12.30
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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