| 摘要 |
<p>PURPOSE: To reduce the wiring resistance and to obtain a good display quality even though it is a liquid crystal display device of a large image plane, by applying an overall etching to the first insulating film up to exposing the first electrode. CONSTITUTION: At first, the first electrode 2 is formed on the whole surface of a substrate 1 by using a spattering method, and an exposing process, a developing process, an etching process, and the like are applied so as to form the first electrode 2. Then, an insulating film 3 is formed on the whole surface of the substarte 1 by using a sputtering method, and after that, an overall etching process is applied to the first insulating film 3 on the substarte 1. As the overall etching, a reaction type ion etching method is used, and it is carried out until the first electrode 2 is exposed. Then, on the surface of the first electrode 2 exposed from the first insulating film 3, the second insulating film 4 is formed by using a positive electrode oxidation method. And the second electrode 5 is formed on the whole surface of the substrate 1 by using a sputtering method, and the exposing and the developing processes, an etching process, and the like are applied to form the second electrode 5.</p> |
