| 摘要 |
PROBLEM TO BE SOLVED: To improve the productivity of an SRAM and, furthermore, improve the operation life and operation reliability of a memory by a method, wherein respective n-channel TFTs are directly connected to related P-channel transistors to constitute inverters and the respective inverters are directly connected to each other through nodes between the transistors. SOLUTION: A problem, which is caused by high kinetic energy electrons in the transistors of a conventional SRAM and known as hot carrier aging, does not exist in the P-channel pull-downs of n-channel MOS devices 10 and 12 and in access transistors 14-17. As the n-channel TFT load devices 10 and 12 are made of polysilicon which has a smaller order of an electron mobility than that of single-crystal silicon, the probability of damages to the TFT unit caused by the high kinetic energy is low. As a result, the long term stability and reliability of a memory such as an SRAM can be improved. |
