| 摘要 |
PURPOSE: To provide a method for curing a photoresist capable of suppressing the shrinkage of resist patterns during the time of a photolithography stage. CONSTITUTION: A layer to be patterned is formed on a semiconductor substrate and a photoresist layer is applied on the layer. The photoresist layer is subjected to exposing and developing by a general method, by which desired patterns are formed. Large pattern parts 3b of these patterns are cured by irradiation with UV light or electron beam without heating and the fine pattern parts 3a are not irradiated. The curing stage is executed by subjecting the fine pattern parts to light shielding or selectively scanning only the large pattern parts with an electron beam. All the patterns of the photoresist are otherwise exposed to a basic atmosphere, before, during or right after the irradiation with the UV light, by which the patterns are cured. After the photoresist patterns are cured, the layer is etched by a general method. |
