发明名称 STEP-UP CIRCUIT OF SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To accurately prevent a boosted voltage from being supplied too much and suppress current consumption by boosting the voltage according to the consumption in an active state. SOLUTION: When a high pulse of a sense control signalϕDET is applied from a sense control circuit 20 to a boosted sense circuit 30, the potential at a sense node is affected corresponding to the level of the boosted voltage VPP. Then when a latch control signalϕLAT goes up to a high level, a transmission gate turns on to generate a sense signalϕPD which is low when the voltage VPP is high in level or high when the voltage is low. A boosting circuit 40 for activation becomes able to boost the voltage when the signal RASB has high-to-low transition and a stand-by boosting circuit 60 becomes able to boost the voltage when the signal RASB has low-to-high transition. The boosting circuits 40 and 60, therefore, boost the voltage alternately with the boosting control signal≃PD which is toggled with the signal RASB.</p>
申请公布号 JPH08235859(A) 申请公布日期 1996.09.13
申请号 JP19950342653 申请日期 1995.12.28
申请人 SAMSUNG ELECTRON CO LTD 发明人 IN TSUGUNORI;BOKU SANSHIYU;KIN HEICHIYORU
分类号 G11C11/407;G11C5/14;G11C11/4074;G11C11/408;H02M3/07;(IPC1-7):G11C11/407 主分类号 G11C11/407
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