发明名称 |
Transistor with voltage clamp |
摘要 |
A power transistor takes advantage of the lower breakdown voltage capability of a spherical junction. A clamping region (40) having a spherical shape is provided in the gate region of an enclosed transistor cell (42). The clamping region (40) has a lower breakdown voltage than do the active portions of the transistor cell (42). Both a DMOSFET and an IGBT transistor may be provided with the clamping region (40) (a MOS-controlled thyristor is also disclosed). The clamping region (40) is a zener diode in the case of the DMOSFET, and is a bipolar junction transistor in the case of the insulated gate bipolar transistor. The clamping region (40) is preferably an island in the center of each cell of a closed cell structure. |
申请公布号 |
EP0416805(B1) |
申请公布日期 |
1996.11.20 |
申请号 |
EP19900309443 |
申请日期 |
1990.08.29 |
申请人 |
SILICONIX, INC. |
发明人 |
YILMAZ, HAMZA;BENCUYA, IZAK |
分类号 |
H01L21/331;H01L21/336;H01L27/04;H01L29/06;H01L29/10;H01L29/423;H01L29/739;H01L29/745;H01L29/78 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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