| 摘要 |
<p>PURPOSE: To reduce the power consumption by preventing a through current from flowing steadily. CONSTITUTION: A series circuit of a depletion type P channel MOSFET 8 and an enhancement type N channel MOSFET 9 is connected to between a first power supply terminal and the ground and the gates of both MOSFETs 8, 9 are commonly connected and connected with a second power supply terminal 2. A voltage detection output terminal OUT is provided at the drains of both MOSFETs 8, 9. When, to the first power supply terminal 1, a voltage E1 is applied and to the second power supply terminal 2, a voltage E1 or E2 (>E1 ) is applied, threshold voltage VTHN of the enhancement type N channel MOSFET 9 is set between E1 and E2 (E1 <VTHN<E2 ) and threshold voltage VTHP of the depletion type P channel MOSFET 8 is set between 0 and E2 -E1 (0<VTHP< E2 -E1 ).</p> |
