发明名称 |
HEAT RESISTANT PHOTORESIST COMPOSITION, PHOTOSENSITIVE BASE MATERIAL AND NEGATIVE PATTERN FORMING METHOD |
摘要 |
PURPOSE: To ensure superior sensitivity and resolution by blending specified polycarbodiimide with a compd. capable of giving an acidic compd. when irradiated with active light. CONSTITUTION: This heat resistant photoresist compsn. contains a resin component having carbodiimido units represented by the formula in each molecule and a compd. capable of giving an acidic compd. when irradiated with active light as essential components. In the formula, R is a divalent org. group. The compd. capable of giving an acidic compd. is arom. sulfonic ester or its deriv. A photosensitive layer formed using this photoresist compsn. is heated after irradiation with active light through a photomask and the unexposed part is removed with a developer. The carbodiimido unit content of the resin component is 20-100mol%, preferably 50-95mol%. |
申请公布号 |
JPH08314141(A) |
申请公布日期 |
1996.11.29 |
申请号 |
JP19950122282 |
申请日期 |
1995.05.22 |
申请人 |
NITTO DENKO CORP |
发明人 |
MAEDA MASAKO;MOCHIZUKI SHU;ISHII YUKIE;AZUMA KAZUMI |
分类号 |
G03F7/004;C08L79/00;G03F7/038;G03F7/38;H01L21/027;(IPC1-7):G03F7/038 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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