| 摘要 |
A memory cell section is divided into a data storage area and a data management information storage area in a column direction. The number of memory cells of each of NAND strings of the data management information storage area is smaller than that of memory cells of each of NAND strings of the data storage area. Word lines are connected in common to NAND strings arranged in the column direction in the data storage area, and two of them extend to be connected in common to the NAND strings arranged in the column direction in the data management information storage area. Bit lines are connected in common to the NAND strings arranged in the row direction.
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