发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND ITS WORD-LINE DRIVING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To compensate for a change of a threshold voltage by feeding a higher selection voltage to a corresponding selected word line as a read selection cell is closer to a bit line. SOLUTION: 16 word line voltage generators 40A-40P output selection voltages of different levels. For example, the circuit 40P outputs 1V as a voltage for a word line WL16, and the circuit 400 outputs 1V+0.6/15V as a voltage for a word line WL15. 16 differentiated selection voltages are thus sequentially output. At the time of a read operation, these selection voltages of different levels are selected by a row decoder 10 and supplied to subject word lines. For passing a read voltage Vread in the non-selected word lines at this time, a predetermined bus voltage is impressed. When a bit line voltage is generated through a predetermined voltage decrease from the read voltage Vread from a second selection transistor ST2, a higher selection voltage is impressed to a memory cell closer to a bit line.</p>
申请公布号 JPH097383(A) 申请公布日期 1997.01.10
申请号 JP19960147270 申请日期 1996.06.10
申请人 SAMSUNG ELECTRON CO LTD 发明人 BOKU SHIYOUUKU
分类号 G11C11/413;G11C16/04;G11C16/06;G11C16/08;G11C17/00;(IPC1-7):G11C16/06 主分类号 G11C11/413
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