| 摘要 |
<p>PURPOSE: To improve the noise margin of a comparison potential against a reference potential without increasing the wiring density. CONSTITUTION: One ends of cell block selecting switches 1L-8L are respectively connected to one ends of memory cell blocks M1L-M8L arranged in parallel with each other. Bit lines B1-B8 are respectively connected to the other ends of the blocks M1L-M8L and bit lines B1-B7 are respectively connected to the other ends of right adjacent memory cell blocks M2L-M8L. At the time of reading out the data of, for example, the memory cell of the block 2L, the left adjacent bit line B1 is electrically connected to a grounding line and a dummy cell is electrically connected to the bit lines B(2+4)=B6 for setting the bit lines at a reference potential. Then the difference between a comparison potential at the bit line B2 and a reference potential at the bit line B6 is amplifier by means of a differential sense amplifier.</p> |
