| 摘要 |
<p>PURPOSE: To easily detect the finish of plasma cleaning of an electrostatic attraction electrode with which the wafer to be plasma treated is supported, and to improve the reproducibility of electrostatic attraction. CONSTITUTION: An ohmmeter 24, with which the resistance of an insulating film is measured, is provided in an electrostatic attraction circuit through a plasma and electrostatic attraction electrode, the change in resistance of the insulating film, which is in plasma cleaning, in detected and the plasma cleaning is finished at the point of time when resistance is lowered to the preset value. As a result, the state same as the insulating film before adhesion of a reaction product is obtained, and the reproducibility of electrostatic attraction can be improved.</p> |
