HIGH DENSE INTEGRATED CIRCUIT PACKAGE AND METHOD OF FORMING IT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor die unit whose dimensions are precise. SOLUTION: A semiconductor die unit 150 to be provided contains a first semiconductor substrate which comprises a first face and a second generally opposite face and in which a plurality of semiconductor devices are formed. The semiconductor die unit to be provided contains at least one of a first metal coating layer which is arranged on a first face of the first semiconductor substrate in order to form interconnections 414 between the semiconductor devices. The outside dimensions of the semiconductor die unit are partitioned by lithography. A carrier 208 which supports the semiconductor die unit contains a substrate comprising a recess partitioned by lithography in order to receive the semiconductor die unit.