发明名称 |
OXIDATION METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
A method for growing a thermal oxide layer in a formation of a semiconductor device is disclosed. The A method for growing a thermal oxide layer in a formation of a semiconductor device comprises the steps of: a) performing a first dry oxidation using oxygen gas at a predetermined temperature in a oxidation tube; b) performing a wet oxidation using oxygen/hydrogen gas; c) performing a second oxidation using oxygen gas. Thereby, high pressure of processing tube is kept and the processing time is reduced and a processing temperature is lowered. In addition, the gas amount of nitrogen is automatically controlled, resulting in obtaining a high quality of oxidation.
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申请公布号 |
KR970000702(B1) |
申请公布日期 |
1997.01.18 |
申请号 |
KR19930010712 |
申请日期 |
1993.06.12 |
申请人 |
HYUNDAI ELECTRONICS IND.CO.,LTD. |
发明人 |
KIM, CHUN-SOO;BANG, CHOL-WON |
分类号 |
H01L21/31;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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