METALIZING METHOD OF SEMICONDUCTOR DEVICE

摘要

Disclosed is a method for preventing a generation of leakage current by curing a damage of an active region of the transistor due to misalign at the time of metal patterning. This method further comprises a step of forming a plug ion-implanting region(30a) after a metal pattern(60a) is formed. The plug ion-implanting region(30a) is implanted same dopants to the source/drain ion-implanting region(30). The dose and the ion-implanting energy for forming the plug ion-implanting region(30a) are range of 3*1015 and from 75KeV to 85KeV, respectively which the damage is sufficiently cured.