| 摘要 |
<p>PROBLEM TO BE SOLVED: To make the consumption of a reaction gas uniform on the surface of a wafer and to improve the thickness uniformity of the intrasurface film of the wafer. SOLUTION: In a wafer supporting structure for semiconductor manufacturing device which is provided with a plurality of struts 1 made of quartz and a wafer supporting ring 2 which is supported in a plurality of stages in the vertical direction of the struts 1 and has an inner peripheral edge formed in accordance with the external size of a wafer 4, a section 6 which is recessed or protruded relatively to the other circular arcuate part of the outer peripheral edge of the ring 2 is formed on the outer peripheral edge of the ring 2 at the position corresponding to or on the opposite side of the orientation flat 5 of the wafer 4.</p> |
