| 主权项 |
1. An electrical system comprising:
a lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) section disposed in a substrate section, said LDMOSFET section comprising a LDMOSFET control gate, a source region, a drain region, and a LDMOSFET semi-conductive channel region (SCR) having a first, second, and third side in close proximity to a gate insulator region, wherein said first and second sides are on opposite sides and said third side is orthogonal to said first and second sides, wherein said first and second sides of LDMOSFET SCR are formed between said source region adjacent to said first side of LDMOSFET SCR and said drain region adjacent to said second side of LDMOSFET SCR, wherein said third side of LDMOSFET SCR is adjacent to said LDMOSFET control gate, said LDMOSFET control gate is also formed partially overlapping a section of said source region, said LDMOSFET control gate is also formed partially overlapping a section of said drain region, said LDMOSFET control gate is further disposed on said LDMOSFET third side SCR; and a metal-semiconductor field effect transistor (MESFET) section disposed onto said substrate, said MESFET section comprising a MESFET control gate and a MESFET SCR where said MESFET SCR is in close proximity to second side of said LDMOSFET SCR, where said MESFET control gate comprising a metal or silicide, said MESFET control gate further formed is not in physical contact with said LDMOSFET body region, said LDMOSFET control gate or said LDMOSFET drain contact, positioned at a first distance from said LDMOSFET control gate, where said first distance determines a distance that an electromagnetic field generated by said MESFET control gate must travel to traverse said MESFET SCR, wherein said MESFET control gate disposed within said drain region is positioned at said first distance to said LDMOSFET control gate. |
