| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for easily manufacturing a light reception element with less dark current without contaminating the light reception region on the surface of a wafer, for example, by an organic matter. SOLUTION: SiN film 5 is etched with a resist pattern as a mask and further n-InGaAs contact layer 4 is etched with the SiN film 5 as a mask, thus forming an alignment mark 21. Then, the SiN film 5 of a light reception region 20 is eliminated by etching and Zn which is a p-type impurity is diffused to this region, thus performing photolithography by an auto-alignment using the alignment mark 21, improving the working efficiency of the alignment operation, and improving the alignment accuracy. Further, since the SiN film 5 of the light reception region 20 is eliminated by etching, the surface of the contact layer 4 cannot be contaminated by a residual organic matter such as resist, thus reducing dark current. |
