| 发明名称 |
Method for fabricating semiconductor device |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an interfacial layer on the substrate; coating a monolayer containing fluorine on the interfacial layer; and forming a gate layer on the interfacial layer. |
| 申请公布号 |
US9455321(B1) |
申请公布日期 |
2016.09.27 |
| 申请号 |
US201514704984 |
申请日期 |
2015.05.06 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Pan Chen-Wei |
| 分类号 |
H01L21/3205;H01L21/4763;H01L29/40;H01L21/02;H01L29/49;H01L21/324 |
主分类号 |
H01L21/3205 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate; forming an interfacial layer on the substrate; using a chemical solution to coat a monolayer containing fluorine on the interfacial layer; and forming a gate layer on the interfacial layer. |
| 地址 |
Hsin-Chu TW |
