Semiconductor memory device and method of manufacturing semiconductor memory device and method of layouting auxiliary pattern

摘要

According to one embodiment, a semiconductor memory device includes a semiconductor substrate, which includes thereon a first region where memory elements are arranged and a second region where circuit elements driving the memory elements are arranged. The first region is provided with a stacked body including a plurality of metal films. Further, the stacked body is divided into a plurality of parts by first separation portions extending in a first direction. The second region is provided with an auxiliary pattern, which includes the stacked body together with a separation portion pair including a pair of second separation portions that divide the stacked body. The second separation portions extend in a second direction intersecting with the first direction.

主权项

1. A semiconductor memory device comprising a semiconductor substrate, which includes thereon a first region where memory elements are arranged and a second region where circuit elements driving the memory elements are arranged,
wherein the first region is provided with a stacked body including a plurality of metal films, the stacked body being divided into a plurality of parts by first separation portions extending in a first direction, and the second region is provided with an auxiliary pattern, which includes the stacked body together with a separation portion pair including a pair of second separation portions that divide the stacked body, the second separation portions extending in a second direction intersecting with the first direction.