| 发明名称 |
Method for fabricating semiconductor device |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region defined thereon; forming a material layer on the substrate; forming a plurality of first mandrels on the material layer of the first region and the second region; forming first spacers adjacent to the first mandrels; forming a hard mask on the first region; trimming the first spacers on the second region; removing the first mandrels; using the first spacers to remove part of the material layer for forming a plurality of second mandrels; forming second spacers adjacent to the second mandrels; removing the second mandrels; and using the second spacers to remove part of the substrate for forming a plurality of fin-shaped structures. |
| 申请公布号 |
US9455194(B1) |
申请公布日期 |
2016.09.27 |
| 申请号 |
US201514864852 |
申请日期 |
2015.09.24 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Feng Li-Wei;Lin Chien-Ting;Tsai Shih-Hung;Fu Ssu-I;Liu Hon-Huei;Hong Shih-Fang;Lin Chao-Hung;Jenq Jyh-Shyang |
| 分类号 |
H01L21/461;H01L21/8234;H01L21/3065;H01L21/308 |
主分类号 |
H01L21/461 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate having a first region and a second region defined thereon; forming a material layer on the substrate; forming a plurality of first mandrels on the material layer of the first region and the second region; forming first spacers adjacent to the first mandrels; forming a hard mask on the first region; trimming the first spacers on the second region; removing the first mandrels; using the first spacers to remove part of the material layer for forming a plurality of second mandrels; forming second spacers adjacent to the second mandrels; removing the second mandrels; and using the second spacers to remove part of the substrate for forming a plurality of fin-shaped structures. |
| 地址 |
Hsin-Chu TW |
