发明名称 |
Diffusion soldering method esp. for semiconductor components |
摘要 |
A method of producing a temp.-stable bond between two bodies involves interposing high melting (Hi) and low melting (Lo) metal layers, contacting the layers and heating to the bonding temp. (TB) under a predetermined temp. and pressure cycle such that the initially melted component (Lo) wets the joint surfaces and diffuses into the high melting component (Hi) to form an intermetallic phase which, after consumption of the low melting component (Lo), forms a stable bonding layer of melting point (TR) higher than that of the low melting component (Lo). The novelty is that (a) the high melting component (Hi) is selected from IV to VIII subgroup metals and is applied onto a first body comprising a semiconductor wafer; and (b) the low melting component (Lo) is selected from III or IV main group elements, is applied onto a second substrate body and, after contacting the high melting metal (Hi) on the semiconductor wafer, is melted. |
申请公布号 |
DE19531158(A1) |
申请公布日期 |
1997.02.27 |
申请号 |
DE1995131158 |
申请日期 |
1995.08.24 |
申请人 |
DAIMLER-BENZ AKTIENGESELLSCHAFT, 70567 STUTTGART, DE |
发明人 |
WILDE, JUERGEN, DR.-ING., 63814 MAINASCHAFF, DE;SCHMID-FETZER, RAINER, PROF. DR.-ING., 38678 CLAUSTHAL-ZELLERFELD, DE |
分类号 |
B23K35/00;B23K35/30;B23K35/32;H01L21/60;H01L21/98;(IPC1-7):H01L21/58;B23K35/24;H01L43/02;H01L31/022;H01L23/488 |
主分类号 |
B23K35/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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