| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device which is provided with a quantum box by a method wherein a semiconductor upper layer is formed at a temperature which is lower than the growth temperature of a semiconductor layer in such a way that the surface of the quantum box covers the whole face of a substrate. SOLUTION: A GaAs buffer layer 31 100nm thick and an InGaAs quantum box layer 32 are formed on a GaAs substrate 30 by using a low-pressure CVD apparatus, and an InGaP layer 33 is formed on them. A quantum box 34 is formed in the InGaAs quantum box layer 32. The GaAs buffer layer 31 uses trimethylgallium and AsH3 as raw materials, and it is formed at a growth temperature of 610 deg.C. The InGaAs quantum box layer 32 is formed in such a way that its growth temperature is set at 460 deg.C and that respective raw materials are supplied alternately at 12 cycles. The InGaP layer 33 uses trimethylindium, triethylgallium and phosphine as raw materials, and it is formed under conditions at a growth temperature of 560 to 590 deg.C and at a growth speed of 1μm/h. Thereby, it is possible to form the quantum box which is provided with the uniformity of an atomic size and whose crystal quality is high. |
