发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To suppress the shrinkage of a film and the reduction of film thickness at the time of development and to ensure satisfactory sensitivity and profile, high resolving power and shelf stability for the time from exposure to heating by using a compd. having an enol ether group and a compd. having an acidic group in a three-component chemical amplification type resist. SOLUTION: An alkali-soluble resin, a compd. having at least one enol ether group represented by the formula, a compd. having an acidic group, a low molecular compd. having an acid-decomposable group and a mol.wt. of <=3,000, a compd. which is decomposed and generates an acid when irradiated with active light or radiation and a solvent are incorporated. In the formula, each of R1 -R3 is H, optionally substd. alkyl, cycloalkyl or aryl and two of them may bond to each other to form a satd. or unsatd. ring. When the resultant positive type photoresist compsn. is applied to a substrate and dried by heating to form a coating film, the purpose can be more effectively attained.
申请公布号 JPH0962006(A) 申请公布日期 1997.03.07
申请号 JP19950217593 申请日期 1995.08.25
申请人 FUJI PHOTO FILM CO LTD 发明人 UENISHI KAZUYA;FUJIMORI TORU;KOKUBO TADAYOSHI
分类号 G03F7/004;G03F7/00;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/004
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