| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the through put of a semiconductor device provided with a polycrystalline silicon film of excellent characteristics. SOLUTION: An amorphous silicon film is formed on a glass substrate 1, a polycrytalline silicon film 2 is formed by laser annealing said amorphous silicon film, a gate electrode is formed on the polycrystalline silicon film 2 through a gate insulating film 3, an impurity region 6, which becomes a source/ drain layer, is formed on the polycrystalline silicon film 2, and the impurity region 6 is activated by quickly heating it using an RTA method.</p> |
