MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To eliminate the upper limit of a process temperature by forming a plurality of films containing IV semiconductor films on a heat-resisting substrate and sticking a transparent insulating substrate onto a laminated film while removing the heat-resisting substrate from the laminator film. SOLUTION: Various films such as SiO2 , a(amorphous)-Si, Al, etc., are formed on one main surface of a metallic wheel 1 by a plurality of evaporating processes in the metallic wheel 1 led out from a roll section. An insulating transparent substrate 2 such as a glass substrate, an organic transparent substrate, etc., is contact-bonded on a deposit film formed by these evaporating processes. A metallic-wheel removing-process energy transistor is formed. That is, the upper limit of a process temperature at the time of the formation of various films containing a IV semiconductor film by the heat-resisting temperature of the transparent insulating substrate is eliminated because heat treatment by a comparatively high temperature required for forming the IV semiconductor film and an insulating film is completed on a heat-resisting substrate. Accordingly, the degree of freedom of the selection of a film formation method is extended.