METHOD FOR FLATTENING SURFACE OF CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To flatten the desired region of the surface of a silicon single crystal substrate having the prescribed surface at an atomic layer level by subjecting the surface of this substrate to specific working and treating. SOLUTION: The surface of the silicon single crystal substrate 3 having the surface of <=0.1 deg. in the deviation from the (001) face is subjected to such working (difference 10 in level) which hinders the movement of surface steps 6. This substrate 3 is held in the state of allowing temp. control by DC electrical heating in a chamber where the vacuum degree is adjustable. The substrate 3 is then heated by DC energization heating and the steps 6 formed on the surface of the substrate 3 are moved to gather the steps 6 to the parts 10 subjected to the working to hinder the movement of the steps 6. Consequently, the flat surface 11 is formed between the previously worked part 10 and the part 10 subjected to another working. The desired regions are flattened in all the directions of the substrate surface by shifting the direction of the DC energization from both directions of [110] and [120] of the substrate crystal.